N-CHANNEL

POWER MOSET

IRF450

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 9118

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown

Voltage

VGS = 0

ID = 250 µA

500

V

RDS(on)

(1)

Static Drain-Source

On-State Resistance

VGS = 10V

ID = 7A

0.4

Ω

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250µA

2

4

V

gfs

(1)

Forward Transconductance

VDS ≥ 15V

I D = 7A

6

S(Ʊ)

VDS = 500V

VGS = 0

250

IDSS

Zero Gate Voltage

Drain Current

VDS = 400V

TC = 125°C

1000

µA

IGSS

Forward Gate-Source

Leakage

VGS = 20V

100

IGSS

Reverse Gate-Source

Leakage

VGS = -20V

-100

nA

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0

2700

Coss

Output Capacitance

VDS = 25V

600

Crss

Reverse Transfer

Capacitance

f = 1.0MHz

240

pF

Qg

Total Gate Charge

VGS = 10V

82

Qgs

Gate-Source Charge

ID = 16A

40

Qgd

Gate-Drain Charge

VDS = 0.8 BVDSS

42

nC

td(on)

Turn-On Delay Time

35

tr

Rise Time

190

td(off)

Turn-Off Delay Time

170

tf

Fall Time

VDD = 250V

ID = 12A

RG = 2.35Ω

130

ns

SOURCE-DRAIN DIODE CHARACTERISTICS

IS

Continuous Source Current

13

ISM

(1)

Pulse Source Current

52

A

IS = 13A

TJ = 25°C

VSD

(1)

Diode Forward Voltage

VGS = 0

1.4

V

Trr

Reverse Recovery Time

IS = 13A

TJ = 150°C

1300

ns

Qrr

(1)

Reverse Recovery Charge

VDD ≤ 50V

di/dt = 100A/µs

7.4

µC