P-CHANNEL

POWER MOSET

IRFF9130 / 2N6849

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 3098

Issue 2

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

BVDSS

Drain-Source Breakdown

Voltage

VGS = 0

ID = -1.0mA

-100

V

J

T

VDSS

B

∆

∆

Temperature Coefficent of

Breakdown Voltage

Reference

to 25°C

ID = -1.0mA

-0.1

V/°C

VGS = -10V

ID = -4.1A

(3)

0.3

TJ = 125°C

0.54

RDS(on)

Static Drain-Source

On-State Resistance

VGS = -10V

ID = -6.5A

(3)

0.32

Ω

VDS = VGS

ID = -250µA

-2

-4

TJ = 125°C

-1.0

VGS(th)

Gate Threshold Voltage

TJ = -55°C

-5

V

gfs

Forward Transconductance

VDS ≥ -5V

I DS = -4.1A

(3)

2.5

3.5

7.5

S(Ʊ)

VGS = 0

VDS = 0.8BVDSS

25

IDSS

Zero Gate Voltage

Drain Current

TJ = 125°C

250

µA

VGS = 20V

100

IGSS

Forward Gate-Source

Leakage

TJ = 125°C

200

VGS = -20V

-100

IGSS

Reverse Gate-Source

Leakage

TJ = 125°C

-200

nA

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0

800

Coss

Output Capacitance

VDS = -25V

350

Crss

Reverse Transfer

Capacitance

f = 1.0MHz

125

pF

Qg

(4)

Total Gate Charge

VGS = -10V

34.8

Qgs

(4)

Gate-Source Charge

ID = -6.5A

6.8

Qgd

(4)

Gate-Drain Charge

VDS = 0.5BVDSS

23.1

nC

td(on)

Turn-On Delay Time

60

tr

Rise Time

140

td(off)

Turn-Off Delay Time

140

tf

Fall Time

VDD = -40V

ID = -4.1A

RG = 7.5Ω

140

ns

SOURCE-DRAIN DIODE CHARACTERISTICS

IS

Continuous Source Current

-6.5

ISM

Pulse Source Current

(1)

-25

A

IS = -6.5A

TJ = 25°C

VSD

Diode Forward Voltage

VGS = 0

(4)

-4.3

V

trr

Reverse Recovery Time

IS = -6.5A

TJ = 25°C

250

ns

Qrr

Reverse Recovery Charge

VDD ≤ -50V

di/dt = 100A/

µs

(3)

3

µC