SILICON EPITAXIAL

PLANAR NPN TRANSISTOR

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 9096

Issue 1

Page 1 of 5

MG6331, MG6331-R

widest Safe Operating Area in TO-3P package

A = 25°C unless otherwise stated)

MG6331

MG6331-R

VCBO

Collector – Base Voltage

230V

260V

VCEO

Collector – Emitter Voltage

230V

260V

VEBO

Emitter – Base Voltage

5V

IC

Continuous Collector Current

18A

IB

Base Current

4A

PD

Total Power Dissipation at

TA = 25°C

300W

TJ

Maximum Junction Temperature

150°C

Tstg

Storage Temperature Range

-55 to +150°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction To Case

0.42

°C/W