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VP1008CSM4 Datasheet(PDF) 1 Page - Seme LAB |
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VP1008CSM4 Datasheet(HTML) 1 Page - Seme LAB |
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1 / 3 page ![]() P-CHANNEL ENHANCEMENT MODE MOSFET Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8447 Issue 2 Page 1 of 3 VP1008CSM4 • Low On-Resistance, RDS(on) • Moderate Threshold, VGS(th) • Low Input Capacitance, CISS • Fast Switching Speed • Hermetic Ceramic Surface Mount Package • Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc.) Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise stated) VDS Drain – Source Voltage 100V VGS Gate – Source Voltage ±30V ID Continuous Drain Current TA = 25°C 300mA TA = 100°C 195mA IDM Pulsed Drain Current (1) 3A PD Total Power Dissipation at TA = 25°C 400mW Derate Above 25°C 3.2mW/°C TJ Operating Temperature Range -55 to +150°C Tstg Storage Temperature Range -55 to +150°C THERMAL PROPERTIES Symbols Parameters Min. Typ. Max. Units RθJA Thermal Resistance, Junction To Ambient 312.5 °C/W Notes Notes Notes Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature |
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