MLD685D datasheet(2/7 Pages) SANKEN

2 / 7 page

http://www.sanken-ele.co.jp

SANKEN ELECTRIC

ＭＬＤ６８５Ｄ

Feb. 2011

The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no

responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.

Copy Right: SANKEN ELECTRIC CO.,LTD.

Page 2

Electrical characteristics

(Ta=25°C）

Limits

Characteristic

Symbol

Test Conditions

MIN

TYP

MAX

Unit

Drain to Source breakdown Voltage

V(BR)DSS

ID=100μA,VGS=0V

Gate to Source Leakage Current

IGSS

VGS=±20V

±10

μA

Drain to Source Leakage Current

IDSS

VDS=60V, VGS=0V

100

μA

Gate Threshold Voltage

VTH

VDS=10V, ID=1mA

2.0

2.5

3.0

Forward Transconductance

Re(yfs)

VDS=10V, ID=42A

Static Drain to Source On-Resistance

RDS(ON)

ID=42A, VGS=10V

4.0

4.7

mΩ

Input Capacitance

Ciss

11500

Output Capacitance

Coss

1500

Reverse Transfer Capacitance

Crss

VDS=10V

VGS=0V

f=1MHz

1100

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

370

Fall Time

ID=42A, VDD 16V

RG=22Ω, VGS=10V

See Fig.2

Source-Drain Diode Forward Voltage

VSD

ISD=50A,VGS=0V

0.87

1.5

Source-Drain Diode Reverse Recovery

Time

trr

ISD=50A

ｄ

i/dt=100A/us

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