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MMBT7002K Datasheet(PDF) 1 Page - Diotec Semiconductor |
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MMBT7002K Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() MMBT7002K MMBT7002K N N-Channel Enhancement Mode FET with protected Gate N-Kanal FET mit Gateschutzdiode – Anreicherungstyp N Version 2011-02-01 Dimensions - Maße [mm] 1 = G 2 = S 3 = D Power dissipation – Verlustleistung 350 mW Plastic case Kunststoffgehäuse SOT-23 (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) MMBT7002K Drain-Source-voltage – Drain-Source-Spannung VDSS 60 V Gate-Source-voltage – Gate-Source-Spannung dc ESD VGSS VGSS ± 20 V ± 2 kV Power dissipation – Verlustleistung Ptot 350 mW Drain current continuos – Drainstrom (dc) ID 115 mA Drain current pulsed – Drainstrom gepulst tp < 10 µs IDM 800 mA Operating Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS 150°C -55…+150°C © Diotec Semiconductor AG http://www.diotec.com/ 1 1.1 0.4 2.9 ±0.1 1 2 3 Type Code 1.9 |
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