2SB1284 datasheet(1/9 Pages) SHINDENGEN

Part #	2SB1284

Description	Darlington Transistor(-10A PNP)

PDF	9 Pages

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Manufacturer	SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]

Direct Link	http://www.shindengen.co.jp/

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1 / 9 page

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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

RATINGS

SHINDENGEN

OUTLINE DIMENSIONS

Case : ITO-220

Darlington Transistor

-10 A PNP

2SB1284

(TP10J10)

●Absolute Maximum Ratings

Item

Symbol

Conditions

Ratings

Unit

Storage Temperature

Tstg

-55∼+150

℃

Junction Temperature

Tj

+150

℃

Collector to Base Voltage

V

CBO

-100

V

Collector to Emitter Voltage

V

CEO

-100

V

Emitter to Base Voltage

V

EBO

-7

V

Collector Current DC

I

C

-10

A

Collector Current Peak

I

CP

-15

A

Base Current DC

I

B

-0.8

A

Base Current Peak

I

BP

-1.5

A

Total Transistor Dissipation

P

T

Tc = 25℃

35

W

Dielectric Strength

Vdis

Terminals to case AC 1 minute

2

kV

Mounting Torque

TOR

(Recommended torque : 0.3N･m）

0.5

N･m

●Electrical Characteristics (Tc=25℃)

Item

Symbol

Conditions

Ratings

Unit

Collector Cutoff Current

I

CBO

V

CB = -100V

Max -0.1

mA

I

CEO

V

CE = -100V

Max -0.1

Emitter Cutoff Current

I

EBO

V

EB = -7V

Max -5

mA

DC Current Gain

h

FE

V

CE = -3V, I C = -5A

Min 1,500

Max 15,000

Collector to Emitter Saturation Voltage

V

CE(sat)

I

C = -5A

Max -1.5

V

Base to Emitter Saturation Voltage

V

BE(sat)

I

B = -10mA

Max -2.0

V

Thermal Resistance

θjc

Junction to case

Max 3.57

℃/W

Transition Frequency

f

T

V

CE = 10V, I C = -1A

TYP 20

MHz

Turn on Time

ton

Max 1

I

C = -5A

Storage Time

ts

I

B1 = IB2 = -10mA

Max 4

μs

R

L = 6Ω

Fall Time

tf

V

BB2 = -4V

Max 2

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2SB1284 Datasheet(PDF) 1 Page - Shindengen Electric Mfg.Co.Ltd

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