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2SD2196 Datasheet(PDF) 1 Page - Shindengen Electric Mfg.Co.Ltd |
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2SD2196 Datasheet(HTML) 1 Page - Shindengen Electric Mfg.Co.Ltd |
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1 / 10 page  Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd RATINGS SHINDENGEN OUTLINE DIMENSIONS Unit : mm Case : ITO-3P Darlington Transistor 15A NPN 2SD2196 (TP15L20) ●Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55～+150 ℃ Junction Temperature Tj +150 ℃ Collector to Base Voltage VCBO 200 V Collector to Emitter Voltage VCEO 200 V Emitter to Base Voltage VEBO 7V Collector Current DC IC 15A Collector Current Peak ICP 22 A Base Current DC IB 1 A Base Current Peak IBP 2A Total Transistor Dissipation PT Tc = 25℃ 65 W Dielectric Strength Vdis Terminals to case AC 1 minute 2kV Mounting Torque TOR (Recommended torque : 0.5N･m） 0.8 N･m ●Electrical Characteristics (Tc=25℃) Item Symbol Conditions Ratings Unit Collector Cutoff Current ICBO VCB = 200V Max 0.1 mA ICEO VCE = 200V Max 0.1 Emitter Cutoff Current IEBO VEB = 7V Max 5 mA DC Current Gain hFE VCE = 3V, IC = 10A Min 1,500 Max 30,000 Collector to Emitter Saturation Voltage VCE(sat) IC = 10A Max 1.5 V Base to Emitter Saturation Voltage VBE(sat) IB = 30mA Max 2.0 V Thermal Resistance θjc Junction to case Max 1.92 ℃/W Transition Frequency fT VCE = 10V, IC = 1.5A TYP 20 MHz Turn on Time ton Max 2 IC = 10A Storage Time ts IB1 = IB2 = 30mA Max 12 μs RL = 3Ω Fall Time tf VBB2 = 4V Max 5 |
Similar Part No. - 2SD2196 |
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Similar Description - 2SD2196 |
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