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HMC669LP3 Datasheet(PDF) 6 Page - Hittite Microwave Corporation |
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HMC669LP3 Datasheet(HTML) 6 Page - Hittite Microwave Corporation |
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6 / 10 page ![]() For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com 7 7 - 6 Typical Supply Current vs. Vdd rbias Ω idd (mA) Vdd= 3V Vdd= 5V 0 55 95 15 49 86 47 41 73 180 [1] 28 50 [1] recommended maximum rbias Drain Bias Voltage (Vdd) +6 Vdc Control Voltage (Vctl) +6 Vdc rf input power (rfiN) lNA mode Bypass / fail safe mode +5 dBm +20 dBm Channel Temperature 150 °C Continuous pdiss (T = 85 °C) (derate 10.71 mw/°C above 85 °C) 0.70 w Thermal resistance (channel to ground paddle) 93.33 °C/w storage Temperature -65 to +150° C operating Temperature -40 to +85° C esD sensitivity (HBm) Class 1A Absolute Maximum Ratings lNA mode Vctl = Vdd = 3 to 5V Bypass mode Vctl= 0V, Vdd = 3 to 5V failsafe mode Vctl = Vdd = N/C Truth Table eleCTrosTATiC seNsiTiVe DeViCe oBserVe HANDliNG preCAUTioNs HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz |
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