For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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HMC717LP3 / 717LP3E

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 4.8 - 6.0 GHz

v02.0809

General Description

Features

Functional Diagram

The HmC717lp3(e) is a GaAs pHemT mmiC

low Noise Amplifier that is ideal for fixed wireless

and lTe/wimAX/4G basestation front-end receivers

operating between 4.8 and 6.0 GHz. The amplifier

has been optimized to provide 1.1 dB noise figure,

16.5 dB gain and +31.5 dBm output ip3 from a single

supply of +5V. input and output return losses are

excellent and the lNA requires minimal external

matching and bias decoupling components. The

HmC717lp3(e) can be biased with +3V to +5V and

features an externally adjustable supply current

which allows the designer to tailor the linearity

performance of the lNA for each application.

Noise figure: 1.1 dB

Gain: 16.5 dB

output ip3: +31.5 dBm

single supply: +3V to +5V

Typical Applications

The HmC717lp3(e) is ideal for:

• fixed wireless and lTe/wimAX/4G

• BTs & infrastructure

• repeaters and femtocells

• public safety radio

• Access points

Electrical Specifications

T

[1] [2]

parameter

Vdd = +3V

Vdd = +5V

Units

min.

Typ.

max.

min.

Typ.

max.

frequency range

4.8 - 6.0

4.8 - 6.0

mHz

Gain

12

14.3

13.5

16.5

dB

Gain Variation over Temperature

0.01

0.01

dB/ °C

Noise figure

1.25

1.5

1.1

1.4

dB

input return loss

13

13

dB

output return loss

13

18

dB

output power for 1 dB Compression (p1dB)

12

14

15

18.5

dBm

saturated output power (psat)

15

19.5

dBm

output Third order intercept (ip3)

25.5

31.5

dBm

Total supply Current (idd)

31

40

73

100

mA

[1] rbias resistor sets current, see application circuit herein

[2] Vdd = Vdd1 = Vdd2