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2N5956 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5956 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5954 2N5955 2N5956 DESCRIPTION ・With TO-66 package ・Low collector saturation voltage ・Excellent safe operating area ・Complement to type 2N6372/6373/6374 APPLICATIONS ・Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5954 -90 2N5955 -70 VCBO Collector-base voltage 2N5956 Open emitter -50 V 2N5954 -80 2N5955 -60 VCEO Collector-emitter voltage 2N5956 Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -6 A IB Base current -2 A PD Total Power Dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 4.3 ℃/W Fig.1 simplified outline (TO-66) and symbol |
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