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SWI50N06A Datasheet(PDF) 3 Page - Xian Semipower Electronic Technology Co., Ltd.

Part # SWI50N06A
Description  N-channel MOSFET (TO-251 , TO-252)
PDF  7 Pages
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Manufacturer  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Direct Link  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SWI50N06A Datasheet(HTML) 3 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
Fig. 3. On-resistance variation vs.
drain current and gate voltage
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
Fig. 4. On state current vs.
diode forward voltage
3/7
10
-1
10
0
10
1
10
0
10
1
10
2
10
3
،ط Note
1. 250§ء Pulse Test
2. T
C
= 25،ة
V
GS
[ V ] Top 15
10
8
7
6
5.5
5
Bottom 4.5
V
DS
[V], Drain to Source Voltage
2
4
6
8
10
10
0
10
1
10
2
،ط Note
V
DS
= 30 [ V ]
250§ء Pulse Test
25[،ة]
125[،ة]
-55[،ة]
Vgs[ v ], Gate-Source Voltage
0
50
100
150
200
0
10
20
30
40
50
60
70
،ط Note
T
J
= 25،ة
V
GS
=20[V]
V
GS
=10[V]
I
D
[ A ], Drain Current
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0
10
1
10
2
Tj=25
oC
Tj=175
oC
،ط Note
V
GS
= 0V
250§ء Pulse Test
Vsd[ V ], Source-Drain Voltage
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
1. C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
2. C
Oss
= C
ds
+ C
gd
3. C
rss
= C
gd
،ط Note
1. V
GS
= 0[V]
2. Frequency = 1[MHz]
C
oss
C
rss
C
iss
V
DS
[ V ], Drain to Source Voltage
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
،ط Note
I
D
= 50A
V
DS
= 48V
V
DS
= 30V
V
DS
=12V
Gate Charge [nC]
SW50N06A
SAMWIN



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