BAS86

Document Number 85511

Rev. 1.8, 13-Jan-11

Vishay Semiconductors

www.vishay.com

1

94 9371

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Small Signal Schottky Diode

Features

• For general purpose applications

• This diode features low turn-on voltage.

The devices are protected by a PN

junction guard ring against excessive

voltage, such as electrostatic discharges.

• Metal-on-silicon Schottky barrier device

which is protected by a PN junction guard ring.

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,

steering, biasing and coupling diodes for fast

switching and low logic level applications

• This diode is also available in a DO-35 case with

type designation BAT86.

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Applications

• Applications where a very low forward voltage is

required

Mechanical Data

Case: MiniMELF SOD-80

Weight: approx. 31 mg

Cathode band color: black

Packaging codes/options:

GS18/10K per 13" reel (8 mm tape), 10K/box

GS08/2.5K per 7" reel (8 mm tape), 12.5K/box

Parts Table

Absolute Maximum Ratings

Thermal Characteristics

Part

Ordering code

Type marking

Remarks

BAS86

BAS86-GS18 or BAS86-GS08

-

Tape and reel

Parameter

Test condition

Symbol

Value

Unit

Continuous reverse voltage

50

V

Forward continuous current

mA

Repetitive peak forward current

mA

mW

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to

ambient air

K/W

Junction temperature

125

°C

Ambient operating temperature

range

- 65 to + 125

°C

Storage temperature range

- 65 to +150

°C