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2SC2552 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2552 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2552 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.5 V ICBO Collector Cutoff Current VCB= 400V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V 20 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 8 Switching times tr Rise Time 1.0 μs tstg Storage Time 2.5 μs tf Fall Time VCC≈ 200V, RL= 250Ω, IB1= -IB2= 0.08A, 1.0 μs isc Website:www.iscsemi.cn 2 |
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