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2SC4327 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4327 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4327 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max)@ (IC= 5A, IB= 0.3A) B ·Complement to Type 2SA1643 APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn |
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