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S1ZAS4 Datasheet(PDF) 1 Page - Shindengen Electric Mfg.Co.Ltd |
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S1ZAS4 Datasheet(HTML) 1 Page - Shindengen Electric Mfg.Co.Ltd |
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1 / 13 page ![]() S1ZAS4 40V 1.2A Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd OUTLINE DIMENSIONS RATINGS SHINDENGEN iUnit : mm ● Switching power supply ● DC/DC converter ● Home Appliances, Office Equipment ● Telecommunication APPLICATION ● SMT ● Tj150℃ ● PRRSM avalanche guaranteed ● Array FEATURES Case : 1Z Dual Schottky Rectifiers (SBD) ●Absolute Maximum Ratings (If not specified Tl=25℃) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40∼150 ℃ Operating Junction Temperature Tj 150 ℃ Maximum Reverse Voltage V RM 40 V Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 45 V 50Hz sine wave, R-load, On alumina substrate, 1 element operation, Ta=49℃ 1.2 Average Rectified Forward Current IO 50Hz sine wave, R-load, On alumina substrate, 2 element operation, Ta=45℃ 0.9* A 50Hz sine wave, R-load, On glass-epoxy substrate, 1 element operation, Ta=47℃ 1.0 50Hz sine wave, R-load, On glass-epoxy substrate, 2 element operation, Ta=43℃ 0.72* Peak Surge Forward Current I FSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃ 40 A Repetitive Peak Surge Reverse Power PRRSM Pulse width 10μs, Rating of per diode, Tj=25℃ 160 W ●Electrical Characteristics (If not specified Tl=25℃) Item Symbol Conditions Ratings Unit Forward Voltage VF IF=1A, Pulse measurement, Rating of per diode Max.0.55 V Reverse Current IR VR=VRM , Pulse measurement, Rating of per diode Max.1 mA Junction Capacitance Cj f=1MHz, VR=10V, Rating of per diode Typ.65 pF θjl junction to lead Max.25 junction to ambient, On alumina substrate, 1 element operation Max.93 Thermal Resistance θja junction to ambient, On alumina substrate, 2 element operation Max.140* ℃/W junction to ambient, On glass-epoxy substrate, 1 element operation Max.120 junction to ambient, On glass-epoxy substrate, 2 element operation Max.186* *: Raitng of per diode |
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