DG541AP datasheet(3/18 Pages) VISHAY

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Document Number: 70055

S11-1429–Rev. H, 18-Jul-11

www.vishay.com

Vishay Siliconix

DG540, DG541, DG542

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. All leads welded or soldered to PC Board.

b. Derate 6.5 mW/°C above 25 °C.

c. Derate 7 mW/°C above 25 °C.

d. Derate 10 mW/°C above 75 °C.

e. Derate 12 mW/°C above 75 °C.

SCHEMATIC DIAGRAM (typical channel)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V+ to V-

- 0.3 to 21

V+ to GND

- 0.3 to 21

V- to GND

- 19 to + 0.3

Digital Inputs

(V-) - 0.3 to (V+) + 0.3

or 20 mA, whichever occurs first

VS, VD

(V-) - 0.3 to (V+) + 14

or 20 mA, whichever occurs first

Continuous Current (Any Terminal)

Current, S or D (Pulsed at 1 ms, 10 % duty cycle max)

Storage Temperature

(AP Suffix)

- 65 to 150

°C

(DJ, DN, DY Suffixes)

- 65 to 125

Power Dissipation (Package)a

16-Pin Plastic DIPb

470

20-Pin Plastic DIPc

800

16-Pin Narrow Body SOICd

640

20-Pin PLCCd

800

16-, 20-Pin Sidebraze DIPe

900

Figure 1.

V+

V-

GND

VREF

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