2SD640 datasheet(2/2 Pages) ISC

Part #	2SD640

Description	isc Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SD640

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 10mA; IB= 0

400

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 5A; IB= 1A

1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A; IB= 1A

2.0

ICBO

Collector Cutoff Current

VCB= 500V; IE= 0

0.1

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

hFE

DC Current Gain

IC= 1A; VCE= 5V

140

COB

Output Capacitance

IE= 0; VCB= 50V; ftest= 1.0MHz

Current-Gain—Bandwidth Product

IC= 0.5A; VCE= 10V

MHz

Switching Times

ton

Turn-on Time

1.0

μs

tstg

Storage Time

3.0

μs

Fall Time

IB1= -IB2= 0.3A; VCC= 200V

0.6

μs

isc Website：www.iscsemi.cn

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