| Electronic Components Datasheet Search |
|
2SD2017 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD2017 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2017 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 250 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=2mA 1.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=2mA 2.0 V ICBO Collector cut-off current VCB=300V; IE=0 100 μA IEBO Emitter cut-off current VEB=20V; IC=0 10 mA hFE DC current gain IC=2A ; VCE=2V 2000 fT Transition frequency IE=-1A ; VCE=12V 20 MHz COB Collector output capacitance f=1MHz;VCB=10V 65 pF Switching times ton Turn-on time 0.6 μs ts Storage time 16.0 μs tf Fall time IC=2.0A ;IB1=5mA;IB2=-10mA VCC=100V ,RL=50Ω 3.0 μs |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |