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2SD2093 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2093 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() 固电半导体 INCHANGE SEMICONDUTOR Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2093 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=5A;IB=10m A 0.9 V VBEsat Base-emitter saturation voltage IC=5A;IB=10m A 2.0 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA;IB=0 110 V V(BR)CBO Collector-base breakdown voltage IC=50mA;RBE=∞ 100 V IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA hFE DC current gain IC=5 A ; VCE=3V 1500 4000 fT Transition frequency IC=5 A ; VCE=5V 20 MHz Switching times ton Turn-on time 0.6 μs ts Storage time 4.8 μs tf Fall time IC=5A IB1=-IB2=10mA VCC=50V ,RL=10Ω 1.6 μs |
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