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2SD2293 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2293 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2293 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V VEBO(BR) Emitter-base breakdown voltage IE=350mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.8A 1.5 V hFE DC current gain IC=0.5A ; VCE=5V 8 ICES Collector cut-off current VCE=1500V; VBE=0 0.5 mA |
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