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BD139 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD139 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BD135 BD137 BD139 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA 0.5 V VBE Base-emitter voltage IC=500mA ; VCE=2V 1.0 V VCB=30V; IE=0 100 nA ICBO Collector cut-off current VCB=30V; IE=0 Tj=125℃ 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 100 nA hFE-1 DC current gain IC=5mA ; VCE=2V 40 hFE-2 DC current gain BD135-10;BD137-10;BD139-10 BD135-16;BD137-16;BD139-16 IC=150mA ; VCE=2V 63 63 100 250 160 250 hFE-3 DC current gain IC=500mA ; VCE=2V 25 fT Transition frequency IC=50mA; VCE=5V ;f=100MHz 190 MHz |
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