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BD676A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD676A
Description  Silicon PNP Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD676A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BD676A Datasheet HTML 1Page - Inchange Semiconductor Company Limited BD676A Datasheet HTML 2Page - Inchange Semiconductor Company Limited BD676A Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD676A/678A/680A/682
DESCRIPTION
・
・With TO-126 package
・Complement to type BD675A/677A/679A/681
・DARLINGTON
・High DC current gain
APPLICATIONS
・For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
BD676A
-45
BD678A
-60
BD680A
-80
VCBO
Collector-base voltage
BD682
Open emitter
-100
V
BD676A
-45
BD678A
-60
BD680A
-80
VCEO
Collector-emitter voltage
BD682
Open base
-100
V
VEBO
Emitter -base voltage
Open collector
-5
V
IC
Collector current
-4
A
ICM
Collector current-Peak
-6
A
IB
Base current
-0.1
A
PC
Collector power dissipation
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃


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