BDT64AF datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDT64F/AF/BF/CF

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BDT64F

-60

BDT64AF

-80

BDT64BF

-100

V(BR)CEO

Collector-Emitter

Breakdown Voltage

BDT64CF

IC= -30mA ;IB=0

-120

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -5A; IB= -20mA

-2.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -10A; IB= -100mA

-3.0

VBE(on)

Base-Emitter On Voltage

IC= -5A ; VCE= -4V

-2.5

VECF

C-E Diode Forward Voltage

IF= -5A

-2.0

ICEO

Collector Cutoff Current

VCE=

2VCEOmax; IB= 0

-1

ICBO

Collector Cutoff Current

VCB= VCBOmax;IE= 0

VCB=

2VCBOmax;IE= 0;TC= 150℃

-0.4

-2

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-5

hFE-1

DC Current Gain

IC= -1A ; VCE= -4V

4000

hFE-2

DC Current Gain

IC= -5A ; VCE= -4V

1000

hFE-3

DC Current Gain

IC= -12A ; VCE= -4V

800

COB

Output Capacitance

IE= 0 ; VCB= -10V; ftest=1MHz

200

Switching times

ton

Turn-On Time

0.5

μs

toff

Turn-Off Time

IC= -5A; IB1= -IB2= -20mA;

VCC= -30V

2.5

μs

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