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BDV67A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDV67A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDV67/67A/67B/67C/67D DESCRIPTION ・With TO-3PN package ・Complement to type BDV66/66A/66B/66C/66D ・DARLINGTON ・High DC current gain APPLICATIONS ・For use in audio output stages and general amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT BDV67 80 BDV67A 100 BDV67B 120 BDV67C 140 VCBO Collector-base voltage BDV67D Open emitter 160 V BDV67 60 BDV67A 80 BDV67B 100 BDV67C 120 VCEO Collector-emitter voltage BDV67D Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 16 A ICM Collector current-peak 20 A IB Base current 0.5 A PC Collector power dissipation TC=25℃ 200 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ Fig.1 simplified outline (TO-3PN) and symbol |
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