BDX88A datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

BDX88/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BDX88

-45

BDX88A

-60

BDX88B

-80

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BDX88C

IC= -100mA; IB= 0

-100

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -6A; IB= -24mA

-2.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -12A; IB= -120mA

-3.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= -12A; IB= -120mA

-4.0

VBE(on)

Base-Emitter On Voltage

IC= -6A; VCE= -3V

-2.8

BDX88

VCB= -45V; IE= 0

VCB= -45V; IE= 0; TC= 150℃

-0.5

-5.0

BDX88A

VCB= -60V; IE= 0

VCB= -60V; IE= 0; TC= 150℃

-0.5

-5.0

BDX88B

VCB= -80V; IE= 0

VCB= -80V; IE= 0; TC= 150℃

-0.5

-5.0

ICBO

Collector

Cutoff Current

BDX88C

VCB= -100V; IE= 0

VCB= -100V; IE= 0; TC= 150℃

-0.5

-5.0

BDX88

VCE= -22V; IB= 0

BDX88A

VCE= -30V; IB= 0

BDX88B

VCE= -40V; IB= 0

ICEO

Collector

Cutoff Current

BDX88C

VCE= -50V; IB= 0

-1.0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-2.0

hFE-1

DC Current Gain

IC= -5A; VCE= -3V

1000

hFE-2

DC Current Gain

IC= -6A; VCE= -3V

750

18000

hFE-3

DC Current Gain

IC= -12A; VCE= -3V

100

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