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BDY53 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BDY53
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDY53 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDY53
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)=60V(Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
·High Switching Speed
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
12
A
IB
B
Base Current
5
A
PC
Collector Power Dissipation@TC=25℃
60
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
isc Website：www.iscsemi.cn
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