BU323 datasheet(1/2 Pages) ISC

Part #	BU323

Description	isc Silicon Darlington NPN Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon Darlington NPN Power Transistor

BU323

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 350V(Min.)

·High Reliability

APPLICATIONS

·Automotive ignition

·Switching regulator

·Motor control applications

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

500

V

VCEO

Collector-Emitter Voltage

350

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current- Continuous

10

A

ICM

Collector Current-Peak

16

A

IB

B

Base Current

3

A

PC

Collector Power Dissipation

@TC=25℃

175

W

Tj

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.0

℃/W

isc Website：www.iscsemi.cn

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