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BU506F Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU506F Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU506F DESCRIPTION ·High Voltage ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE=0 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB B Base Current-Continuous 3 A IBM Base Current-Peak 5 A PC Collector Power Dissipation @ TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.35 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 55 ℃/W isc Website：www.iscsemi.cn |
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