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BU508AF Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU508AF Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BU508AF CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 700 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.6A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A 1.1 V ICES Collector cut-off current VCE=RatedVCE; VBE=0 TC=125℃ 1.0 2.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 10 mA hFE DC current gain IC=0.1A ; VCE=5V 6 30 fT Transition frequency IC=0.1A ; VCE=5V 7 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 125 pF |
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