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BUL56B Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUL56B
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL56B Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUL56B Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUL56B Datasheet HTML 2Page - Inchange Semiconductor Company Limited BUL56B Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUL56B
DESCRIPTION
・
・With TO-220C package
・High voltage
・Fast switching
・High energy rating
APPLICATIONS
・Designed for use in electronic
ballast applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
250
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
18
A
ICM
Collector current-Peak
25
A
IB
Base current
5
A
Ptot
Total power dissipation
TC=25℃
85
W
Tstg
Operating and storage temperature
-55~150
℃


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