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BUV27A Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUV27A Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUV27A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH 150 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 30 V VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4 A 0.7 V VCEsat-2 Collector-emitter saturation voltage IC=7A; IB=0.7A 1.5 V VBEsat Base-emitter saturation voltage IC=7A; IB=0.7A 2 V ICEX Collector cut-off current VCE =300V;VBE = -1.5 V TC=125℃ 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA |
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