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BUX32 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUX32 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX32/A/B DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUX32 = 450V (Min)-BUX32A = 450V (Min)-BUX32B ·Low Saturation Voltage APPLICATIONS ·Designed for off-line power supplies and are also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT BUX32 800 BUX32A 900 VCES Collector- Emitter Voltage(VBE= 0) BUX32B 1000 V BUX32 400 BUX32A 450 VCEO Collector-Emitter Voltage BUX32B 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IB B Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W isc Website:www.iscsemi.cn |
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