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MJ900 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ900 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor MJ900 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=-0.1A; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-3A; IB=-12mA -2.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC=-8A; IB=-40mA -4.0 V VBE(on) Base-Emitter On Voltage IC=-3A, VCE=-3V -2.5 V ICER Collector Cutoff Current VCE=-60V; RBE=1kΩ VCE=-60V; RBE=1kΩ; TC=150℃ -1.0 -5.0 mA ICEO Collector Cutoff Current VCE=-30V; IB= 0 -0.5 mA IEBO Emitter Cutoff Current VEB=-5V; IC= 0 -2.0 mA hFE-1 DC Current Gain IC=-3A, VCE=-3V 1000 hFE-2 DC Current Gain IC=-4A, VCE=- 3V 750 isc Website:www.iscsemi.cn |
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