MJE13070 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

MJE13070/13071

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

MJE13070

400

V(BR)CEO

Collector-Emitter

Breakdown Voltage

MJE13071

IC= 0.1A ;IB= 0

450

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 3A; IB= 0.6A

IC= 3A; IB= 0.6A;T

C=100℃

1.0

2.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 5A; IB= 1A

3.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 3A; IB= 0.6A

IC= 3A; IB= 0.6A;T

C=100℃

1.5

ICEV

Collector Cutoff Current

VCEV=Rated Value;VBE(off)= 1.5V

VCEV=Rated Value;VBE(off)=1.5V;TC=100℃

0.5

2.5

IEBO

Emitter Cutoff Current

VEB= 6V; IC=0

1.0

hFE

DC Current Gain

IC= 3A ; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V, ftest= 1.0kHz

250

Switching Times

Delay Time

0.05

μs

Rise Time

0.4

μs

tstg

Storage Time

1.5

μs

Fall Time

IC= 3A; IB1= 0.4A;VBE(off)= 5V;

VCC= 250V; tp= 30μs,Duty Cycle≤1%

0.5

μs

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