SI1330EDL datasheet(2/4 Pages) VISHAY

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Vishay Siliconix

SPICE Device Model Si1330EDL

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

1.6

On-State Drain Current

ID(on)

VDS = 5 V, VGS = 10 V

VGS = 10 V, ID = 0.25 A

1.1

Drain-Source On-State Resistance

rDS(on)

VGS = 4.5 V, ID = 0.20 A

1.6

1.4

Ω

Forward Transconductance

gfs

VDS = 10 V, ID = 0.25 A

240

350

Diode Forward Voltage

VSD

IS = 0.23 A, VGS = 0 V

0.85

0.83

Dynamic

Total Gate Charge

0.30

0.40

Gate-Source Charge

Qgs

0.11

Gate-Drain Charge

Qgd

VDS = 10 V, VGS = 4.5 V, ID = 0.25 A

0.15

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

www.vishay.com

Document Number: 73279

S-50257

Rev. A, 21-Feb-05

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