SI8902EDB datasheet(2/9 Pages) VISHAY

2 / 9 page

www.vishay.com

Document Number: 71862

S-83049-Rev. I, 22-Dec-08

Vishay Siliconix

Si8902EDB

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VSS = VGS, ID = 980 µA

0.45

1.0

Gate-Body Leakage

IGSS

VSS = 0 V, VGS = ± 4.5 V

± 4

µA

VSS = 0 V, VGS = ± 12 V

± 10

Zero Gate Voltage Source Current

IS1S2

VSS = 20 V, VGS = 0 V

µA

VSS = 20 V, VGS = 0 V, TJ = 85 °C

On-State Source Currenta

IS(on)

VSS = 5 V, VGS = 4.5 V

Source1-Source2 On State Resistancea

RS1S2(on)

VGS = 4.5 V, ISS = 1 A

0.038

0.045

VGS = 3.7 V, ISS = 1 A

0.041

0.048

VGS = 2.5 V, ISS = 1 A

0.048

0.057

VGS = 1.8 V, ISS = 1 A

0.060

0.072

Forward Transconductancea

gfs

VSS = 10 V, ISS = 1 A

Dynamicb

Turn-On Delay Time

td(on)

VSS = 10 V, RL = 10 Ω

ISS ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω

11.5

µs

Rise Time

34.5

Turn-Off Delay Time

td(off)

Fall Time

Gate-Current vs. Gate-Source Voltage

VGS - Gate-to-Source Voltage (V)

IGSS at 25 °C (mA)

Gate Current vs. Gate-Source Voltage

0.01

100

10 000

0.1

1000

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 150 °C

SI8902EDB Datasheet(PDF) 2 Page - Vishay Siliconix

SI8902EDB Datasheet(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL