SI9933CDY datasheet(2/5 Pages) VISHAY

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Vishay Siliconix

SPICE Device Model Si9933CDY

www.vishay.com

Document Number: 64515

S-83055

⎯Rev. A, 19-Jan-09

SPECIFICATIONS (T

J = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

GS(th)

DS = VGS, ID = −250 μA

0.89

GS = −4.5 V, ID = −4.8 A

0.048

Drain-Source On-State Resistance

DS(on)

GS = −2.5 V, ID = −1 A

0.072

0.075

Forward Transconductance

DS = −10 V, ID = −4.8 A

Diode Forward Voltage

S = −3.8 A

−0.84

−0.77

Dynamic

Input Capacitance

iss

662

665

Output Capacitance

oss

140

Reverse Transfer Capacitance

rss

DS = −10 V, VGS = 0 V, f = 1 MHz

113

115

DS = −10 V, VGS = −10 V, ID = −4.8 A

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

DS = −10 V, VGS = −4.5 V, ID = −4.8 A

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

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