SIR424DP datasheet(3/13 Pages) VISHAY

3 / 13 page

Document Number: 64830

S09-0854-Rev. A, 18-May-09

www.vishay.com

Vishay Siliconix

SiR424DP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0.0

0.5

1.0

1.5

2.0

VGS =10 V thru 4 V

VGS =3 V

VDS - Drain-to-Source Voltage (V)

0.000

0.003

0.006

0.009

0.012

020

100

120

VGS =10 V

VGS =4.5 V

ID - Drain Current (A)

ID =24A

VDS = 15 V

VDS =10 V

VDS =5 V

Qg - Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

1.2

012

TC = 25 °C

TC = 125 °C

TC = - 55 °C

VGS - Gate-to-Source Voltage (V)

Crss

400

800

1200

1600

Ciss

Coss

VDS - Drain-to-Source Voltage (V)

0.7

0.9

1.1

1.3

1.5

1.7

- 50

- 25

100

125

150

ID =20A

VGS =4.5 V

VGS =10 V

TJ -Junction Temperature (°C)

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