Document Number: 89139

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 25-Aug-09

1

Surface Mount Trench MOS Barrier Schottky Rectifier

VSSB310

Vishay General Semiconductor

New Product

FEATURES

• Low profile package

• Ideal for automated placement

• Trench MOS Schottky technology

• Low power losses, high efficiency

• Low forward voltage drop

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Compliant

to

RoHS

directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For

use

in

low

voltage,

high

frequency

inverters,

freewheeling, dc-to-dc converters, and polarity protection

applications.

MECHANICAL DATA

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes the cathode end

Notes

PRIMARY CHARACTERISTICS

3.0 A

100 V

80 A

50 mJ

0.56 V

150 °C

DO-214AA (SMB)

TMBS

®

PARAMETER

SYMBOL

VSSB310

UNIT

Device marking code

V3B

Maximum repetitive peak reverse voltage

100

V

Maximum DC forward current

3.0

A

1.9

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

80

A

Non-repetitive avalanche energy

50

mJ

1.0

A

Operating junction and storage temperature range

- 40 to + 150

°C