BLF642 datasheet(1/12 Pages) PHILIPS

Part #	BLF642

Description	Broadband power LDMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1.

Product profile

1.1 General description

A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications.

The transistor is suitable for the frequency range HF to 1400 MHz. The excellent

ruggedness and broadband performance of this device makes it ideal for digital

applications.

1.2 Features and benefits

 CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent

drain current IDq =0.2 A :

 Average output power = 35 W

 Power gain = 19 dB

 Drain efficiency = 63 %

 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent

drain current IDq =0.2 A :

 Average output power = 17.5 W

 Power gain = 19 dB

 Drain efficiency = 48 %

 Intermodulation distortion =

28 dBc

 Integrated ESD protection

 Excellent ruggedness

 High power gain

 High efficiency

 Excellent reliability

 Easy power control

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

BLF642

Broadband power LDMOS transistor

Rev. 2 — 22 July 2011

Product data sheet

Table 1.

Typical performance

RF performance at Th = 25 C in a common source test circuit.

Mode of operation

f

VDS

PL

Gp



D

IMD

(MHz)

(V)

(W)

(dB)

(%)

(dBc)

CW, class-AB

1300

32

35

19

63

-

2-tone, class-AB

1300

32

17.5

19

48

28

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