2SC2715 datasheet(1/4 Pages) HTSEMI

Part #	2SC2715

Description	TRANSISTOR (NPN)

PDF	4 Pages

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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1 / 4 page

TRANSISTOR (NPN)

FEATURES

High Power Gain

Recommended for FM IF,OSC Stage and AM CONV. IF Stage.

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

35

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

4

V

IC

Collector Current -Continuous

50

mA

PC

Collector Power Dissipation

350

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=10μA, IE=0

35

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA, IC=0

4

V

Collector cut-off current

ICBO

VCB=35V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=4V, IC=0

0.1

μA

DC current gain

hFE(1)

VCE=12V, IC=2mA

40

240

Collector-emitter saturation voltage

VCE(sat)

IC=10mA, IB=1mA

0.4

V

Base-emitter saturation voltage

VBE(sat)

IC=10mA, IB=1mA

1

V

Transition frequency

fT

VCE=10V, IC=1mA

100

400

MHz

Power Gain

Gpe

VCE=6V, IC=1mA, f=10.7MHZ

27

33

dB

CLASSIFICATION OF

hFE(1)

Rank

R

O

Y

Range

40-80

70-140

120-240

Marking

RR1

RO1

RY1

SOT-23

1.

BASE

2.

EMITTER

3.

COLLECTOR

2SC2715

１　

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