2SC3052 datasheet(1/3 Pages) HTSEMI

Part #	2SC3052

Description	TRANSISTOR (NPN)

PDF	3 Pages

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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TRANSISTOR (NPN)

FEATURES

Low collector to emitter saturation voltage

VCE(sat)=0.3V max(@IC=100mA,IB=10mA)

Excellent linearity of DC forward current gain

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V (BR) CBO

IC = 100 μA, IE=0

50

V

Collector-emitter breakdown voltage

V (BR) CEO

IC = 100 μA, IB=0

50

V

Emitter-base breakdown voltage

V (BR) EBO

IE= 100 μA, IC=0

6

V

Collector cut-off current

ICBO

VCB= 50 V , IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB= 6V , IC=0

0.1

μA

hFE(1)

VCE= 6V, IC= 1mA

150

800

DC current gain

hFE(2)

VCE= 6V, IC= 0.1mA

50

Collector-emitter saturation voltage

VCE (sat)

IC=100mA, IB= 10mA

0.3

V

Base-emitter saturation voltage

VBE (sat)

IC= 100mA, IB= 10mA

1

V

Transition frequency

fT

VCE= 6V, IC= 10mA

180

MHz

Collector output capacitance

Cob

VCE=6V, IE=0, f=1MHz

4

pF

Noise figure

NF

VCE=6V,IE=-0.1mA, f=1KHz, RG=2KΩ

15

dB

CLASSIFICATION OF hFE(1)

Rank

E

F

G

Range

150~300

250~500

400~800

Marking

LE

LF

LG

Symbol

Parameter

Value

Units

VCBO

Collector- Base Voltage

50

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

0.2

A

PC

Collector Power Dissipation

150

mW

TJ

Junction Temperature

125

℃

Tstg

Storage Temperature

-55-125

℃

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

１　

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2SC3052

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2SC3052 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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