2SC3650 datasheet(1/1 Pages) HTSEMI

Part #	2SC3650

Description	TRANSISTOR (NPN)

PDF	1 Pages

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

TRANSISTOR (NPN)

FEATURES



Small Flat Package



High DC Current Gain



Low VCE(sat)



Large Current Capacity

APPLICATIONS



LF Amplifiers, Various Drivers, Muting Circuit

MARKING:CF

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=10µA,IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10µA,IC=0

15

V

Collector cut-off current

ICBO

VCB=20V,IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=10V,IC=0

0.1

µA

hFE(1)

VCE=5V, IC=500mA

800

3200

DC current gain

hFE(2)

VCE=5V, IC=10mA

600

Collector-emitter saturation voltage

VCE(sat)

IC=500mA,IB=10mA

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=500mA,IB=10mA

1.2

V

Transition frequency

fT

VCE=10V,IC=50mA

220

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

17

pF

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

15

V

IC

Collector Current

1.2

A

PC

Collector Power Dissipation

500

mW

RθJA

Thermal Resistance From Junction To Ambient

250

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

１　

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2SC3650

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