2SC4081 datasheet(1/2 Pages) HTSEMI

Part #	2SC4081

Description	TRANSISTOR (NPN)

PDF	2 Pages

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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1 / 2 page

TRANSISTOR (NPN)

FEATURES

Excellent hFE linearity

Complements the 2A1576A

MAXIMUM RATINGS (

TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current -Continuous

150

mA

PC

Collector Power Dissipation

200

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=50μA,IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50μA,IC=0

7

V

Collector cut-off current

ICBO

VCB=60V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=7V,IC=0

0.1

μA

DC current gain

hFE(1)

VCE=6V,IC=1mA

120

560

Collector-emitter saturation voltage

VCE(sat)

IC=50mA,IB=5mA

0.4

V

Transition frequency

fT

VCE=12V,IC=2mA,f=30MHz

180

MHz

Collector output capacitance

Cob

VCB12V,IE=0,f=1MHz

3.5

pF

CLASSIFICATION OF

hFE(1)

Rank

Q

R

S

Range

120-270

180-390

270-560

Marking

BQ

BR

BS

SOT-323

1. BASE

2. EMITTER

3. COLLECTOR

１　

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2SC4081

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2SC4081 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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