2SC4944 datasheet(1/1 Pages) HTSEMI

Part #	2SC4944

Description	DUAL TRANSISTOR (NPN NPN)

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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SOT-353

1

2SC4944

DUAL TRANSISTOR (NPN+ NPN)

Features

Small package (dual type)

High voltage and high current

High hFE,

excellent hFE linearity

Complementary to 2SA1873

Marking: LY LGR

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

150

mA

PC

Collector Power Dissipation

200

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55 to150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100μA,IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA,IC=0

5

V

Collector cut-off current

ICBO

VCB=60V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=6V,IC=2mA

120

400

Collector-emitter saturation voltage

VCE(sat)

IC=100mA,IB=10mA

0.25

V

Transition frequency

fT

VCE=10V,IC=1mA

80

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

3.5

pF

CLASSIFICATION OF

hFE

Rank

Y

GR

Range

120-240

200-400

Marking

LY

LGR

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semiconductor

JinYu

1

Date:2011/ 05

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