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RU1H100Q Datasheet(PDF) 1 Page - Ruichips Semiconductor Co., Ltd

Part # RU1H100Q
Description  N-Channel Advanced Power MOSFET
PDF  11 Pages
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Manufacturer  RUICHIPS [Ruichips Semiconductor Co., Ltd]
Direct Link  http://www.ruichips.com
Logo RUICHIPS - Ruichips Semiconductor Co., Ltd

RU1H100Q Datasheet(HTML) 1 Page - Ruichips Semiconductor Co., Ltd

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Copyright
© Ruichips Semiconductor Co., Ltd
Rev.A –SEP., 2010
www.ruichips.com
RU1H100
N-Channel Advanced Power MOSFET
Features
Pin Description
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
100
VGSS
Gate-Source Voltage
±25
V
TJ
Maximum Junction Temperature
175
°C
TSTG
Storage Temperature Range
-55 to 175
°C
IS
Diode Continuous Forward Current
TC=25°C
75
①
A
Mounted on Large Heat Sink
IDP
300
µs Pulsed Drain Current Tested
TC=25°C
300
TC=25°C
75
①
ID
Continue Drain Current
TC=100°C
59
A
TC=25°C
200
PD
Maximum Power Dissipation
TC=100°C
100
W
RθJC
Thermal Resistance -Junction to Case
0.75
RθJA
Thermal Resistance-Junction to Ambient
62.5
°C/W
Drain-Source Avalanche Ratings
Storage Temperature Range
-55 to 150
EAS
②
Avalanche Energy ,Single Pulsed
400
mJ
Absolute Maximum Ratings
•
100V/75A
RDS (ON)=11m
Ω(Typ.) @ VGS=10V
• Ultra Low On-Resistance
• Extremely high dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
Applications
·High Speed Power Switching
·Uninterruptible Power Supply
TO-220
TO-220F
TO-247
TO-263
N-Channel MOSFET


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