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SDN520C Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SDN520C Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() SDN520C N-Ch: 4.5 A, 20 V, RDS(ON) 58 mΩ Ω Ω Ω P-Ch: -4.5 A, -20 V, RDS(ON) 112 mΩ Ω Ω Ω N & P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 4-Jul-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell Density trench process to provide low RDS(on) and to assures minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DFN2X2_6L saves board space. Fast switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. ABSOLUTE MAXIMUM RATINGS(TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit N-Channel P-Channel Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±8 ±8 V Continuous Drain Current 1 TA=25℃ ℃ ℃ ℃ ID 4.5 -4.5 A TA=70℃ ℃ ℃ ℃ 4.5 -4.5 Pulsed Drain Current 2 IDM 8 -8 A Continuous Source Current (Diode Conduction) 1 IS 4.5 -4.5 A Power Dissipation 1 TA=25℃ ℃ ℃ ℃ PD 6.5 W TA=70℃ ℃ ℃ ℃ 5 Operating Junction and Storage Temperature Range TJ, Tstg -55 ~ +150 ℃ ℃ ℃ ℃ Thermal Resistance Rating Parameter Symbol Typ Max Unit Maximum Junction to Ambient 1 t ≦ 5 sec RθJA 52 65 ℃ ℃ ℃ ℃ / W Steady State 12.5 16 Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. DFN2x2-6L REF. Millimeter REF. Millimeter Min. Typ. Max. Min. Typ. Max. A 2.00 BSC. G 0.23 0.30 0.38 B 2.00 BSC. H 0.65BSC - C 0.675 0.75 0.80 J 0 - 0.05 D 0.25 0.30 0.35 K 0.15 0.20 0.25 E 0.81 0.86 0.91 L 0.25 0.30 0.35 F 0.65BSC P 0.60 0.65 0.70 TOP VIEW |
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