SSD95N03

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

24-Nov-2011 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

30

-

-

V

-

0.0213

-

V / °C

Reference to 25°C,

Gate-Threshold Voltage

1.0

-

2.5

V

Forward Transconductance

-

26.5

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current

-

-

1

µA

-

-

5

Static Drain-Source On-Resistance

2

-

3.4

4

m

-

5.2

6

Total Gate Charge

-

31.6

-

nC

Gate-Source Charge

-

8.6

-

Gate-Drain (“Miller”) Change

-

11.7

-

Turn-on Delay Time

-

9

-

nS

Rise Time

-

19

-

Turn-off Delay Time

-

58

-

Fall Time

-

15.2

-

Input Capacitance

-

3075

4000

pF

f =1.0MHz

Output Capacitance

-

400

530

Reverse Transfer Capacitance

-

315

-

Guaranteed Avalanche Characteristics

Single Pulse Avalanche Energy

5

EAS

98

-

-

mJ

Source-Drain Diode

Diode Forward Voltage

2

-

-

1.2

V

Continuous Source Current

1,6

-

-

96

A

Pulsed Source Current

2,6

-

-

192

A

Notes:

1.

The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.

The data tested by pulsed , pulse width≦300µs , duty cycle≦2%

3.

4.

The power dissipation is limited by 175°C junct ion temperature

5.

The Min. value is 100% EAS tested guarantee.

6.