BU2508DF

GENERAL DESCRIPTION

Product specification

ABSOLUTE MAXIMUM RATINGS

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor

with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal

deflection circuits of colour television receivers. Features exceptional tolerance to base drive

and collector current load variations resulting in a very low worst case dissipation.

Silicon Diffused Power Transistor

Parameter

Symbol

Value

Unit

Collector-Base Voltage

1500

V

Collector-Emitter Voltage

700

V

Emitter-Base Voltage

6

V

Collector Current

8.0

A

Base Current

3.5

A

Total Dissipation at

45

W

Max. Operating Junction Temperature

150

Storage Temperature

-65~150

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

—

—

1.0

mA

Emitter Cut-off Current

—

227

—

mA

Collector-Emitter Sustaining Voltage

700

—

—

V

DC Current Gain

—

13

—

4

—

10

Collector-Emitter Saturation Voltage

—

—

1.0

V

Base-Emitter Saturation Voltage

—

—

1.1

V

Diode forward voltage

—

1.6

2.0

V

ELECTRICAL CHARACTERISTICS (Tcase = 25 ℃ unless otherwise specified)

TOP-3Fa

TIGER ELECTRONIC CO.,LTD